Power Device PFF18N50
500V N-Channel MOSFET
| Part No. | PFF18N50 |
|---|---|
| Datasheet | PFF18N50 Download |
| Manufacturer | Power Device |
| Description | 500V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 48.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.26 Ω (Typ.) @VGS=10V APPLICATION High current, High speed switching Suitable for power supplies, adaptors and PFC SMPS (Switched Mode Power Supplies) PFP18N50/PFF18N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.26 Ω ID = 18 A Drain { Gate {● ◀▲
●
● Source { TO-220 TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Source
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter PFP18N50 PFF18N50 VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Rec...
