PFF18N50 Datasheet | Wing On

Feb 2009 PFP18N50 / PFF18N50 Features  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 48.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.26 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP18N50 / PFF18N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.26 Ω ID = 18 A Drain  Gate  - ◀▲ - -  Source TO-220 TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3....