PTP5027
PTP5027 is NPN Silicon Power Transistor manufactured by Power Device.
Aug 2006
NPN Silicon Power Transistor 3.0 Amperes / 50 Watts High Voltage and High Reliability
TO-220 1. Base 2. Collector 3. Emitter
- High Speed Switching
- Wide SOA
Absolute Maximum Ratings
CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature
TC=25℃ unless otherwise noted SYMBOL VCBO VCEO VEBO IC ICP IB PC TJ TSTG RATING 1100 800 7 3 10 1.5 50 150 -55~150 UNIT V V V A A A W ℃ ℃
Electrical Characteristics
CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Collector Cut0off Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn on Time Storage Time Fall Time
TC=25℃ unless otherwise noted SYMBOL VCBO VCEO VEBO ICEX(sus) ICBO IEBO h FE1 h FE2 VCE(sat) VBE(sat) Cob f T ton tstg tf Test Condition IC=1m A, IE=0 IC=5m A, IB=0 IE=1m A, IE=0 IC=1.5A, IB1=-IB2=0.3A L=2m H, Clamped VCB=800V,IE=0 VEB=5V,IC=0 VCE=5V,IC=0.2A VCE=5V,IC=1A IC=1.5A,IB=0.3A IC=1.5A,IB=0.3A
VCB=10V,IE=0, f=0.1MHz
Min 1100 800 7 800
Typ.
Max
Unit V V V V
10 10 10 8 40 2 1.5 60 15 0.5 3.0 0.3
μA μA
V V p F MHz μS μS μS
VCE=10V,IC=0.2A Vcc=400V, Ic=5A IB1=-2.5A, IB2=2A RL=200Ω
Note :
Aug 2006 h FE1 Classification
N :10 ~ 20,
R : 15 ~ 30,
O : 20 ~ 40
Power Device REV.A0
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation
Figure 4. Base-Emitter On Voltage
Figure 5. Switching Time
Figure 6. Safe Operating Area
Aug 2006
Power Device REV.A0
Typical Characteristics ( Continued )
Figure 7. Reverse Bias Operating...
