Power Device PTP5027
NPN Silicon Power Transistor
| Part No. | PTP5027 |
|---|---|
| Datasheet | PTP5027 Download |
| Manufacturer | Power Device |
| Description | NPN Silicon Power Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature TC=25℃ unless otherwise noted SYMBOL VCBO VCEO VEBO IC ICP IB PC TJ TSTG RATING 1100 800 7 3 10 1.5 50 150 -55~150 UNIT V V V A A A W ℃ ℃ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Collector Cut0off Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn on Time Storage Time Fall Time TC=25℃ unless otherwise noted SYMBOL VCBO VCEO VEBO ICEX(sus) ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT ton tstg tf Test Condition IC=1mA, IE=0 IC=5mA, IB=0 IE=1mA, IE=0 IC=1.5A, IB1=-IB2=0.3A L=2mH, Clamped VCB=800V,IE=0 VEB=5V,IC=0 VCE=5V,IC=0.2A VCE=5V,IC=1A IC=1.5A,IB=0.3A IC=1.5A,IB=0.3A VCB=10V,IE=0, f=0.1MHz Min 1100 800 7 800 Typ.
