PTP5027 Datasheet | Wing On

Aug 2006 NPN Silicon Power Transistor 3.0 Amperes / 50 Watts TO-220 High Voltage and High Reliability - High Speed Switching - Wide SOA Absolute Maximum Ratings TC=25℃ unless otherwise noted CHARACTERISTICS SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP IB PC TJ TSTG 12 3 1. Emitter 2. Collector 3. Base RATING 1100 800 7 3 10 1.5 50 150 -55~150 UNIT V V V A A A W ℃ ℃ Electrical Characteristics TC=25℃ unless otherwise noted CHARACTERISTICS SYMBOL Test Condition Min Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage VCBO VCEO VEBO ICEX(sus) IC=1m A, IE=0 IC=5m A, IB=0 IE=1m A, IE=0 IC=1.5A, IB1=-IB2=0.3A L=2m H, Clamped 1100 800 7 800 Collector Cut0off Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn on Time Storage Time Fall Time Note : h FE1 Classification ICBO VCB=800V,IE=0 IEBO VEB=5V,IC=0 h FE1 VCE=5V,IC=0.2A 10 h FE2 VCE=5V,IC=1A...