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BULD50 - NPN Transistor

Description

The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s).

This range of switching transistors has tightly controlled storage times and an integrated fast trr antiparallel diode.

Features

  • is single-in-line package consists of a circuit mounted.

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Datasheet preview – BULD50

Datasheet Details

Part number BULD50
Manufacturer Power Innovations Limited
File Size 231.08 KB
Description NPN Transistor
Datasheet download datasheet BULD50 Datasheet
Additional preview pages of the BULD50 datasheet.

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Full PDF Text Transcription

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BULD50KC, BULD50SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright © 1997, Power Innovations Limited, UK FEBRUARY 1994 - REVISED SEPTEMBER 1997 q Designed Specifically for High Frequency Electronic Ballasts Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability Diode trr Typically 1 µs New Low-Height SL Power Package, TO220 Pin-Compatible Tightly Controlled Transistor Storage Times Voltage Matched Integrated Transistor and Diode Characteristics Optimised for Cool Running Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability B C E B C E TO-220 PACKAGE (TOP VIEW) q 1 2 3 q q Pin 2 is in electrical contact with the mounting base.
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