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IRFP064N Datasheet Power MOSFET

Manufacturer: Power MOSFET

Overview: PD - 9.1383A IRFP064N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.

Datasheet Details

Part number IRFP064N
Manufacturer Power MOSFET
File Size 107.54 KB
Description Power MOSFET
Datasheet IRFP064N_PowerMOSFET.pdf

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for mercial-industrial applications where higher power levels preclude the use of TO-220 devices.

Key Features

  • ) 4. 50 (.1 77 ) NOT ES : 1 DIME NSIO NING & TO LERAN CING PE R AN SI Y 14.5M, 1982. 2 CO NTRO LLING DIMENS IO N : IN CH . 3 CO NF ORM S T O JEDE C O UTLINE T O-247-A C. 2 .4 0 (.09 4 ) 2 .0 0 (.07 9 ) 2X 5 .45 (.2 1 5) 2X 1 .4 0 (.0 56 ) 3 X 1 .0 0 (.0 39 ) 0 .25 (.0 10 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) C A S 0 .8 0 (. 03 1 ) 3 X 0 .4 0 (. 01 6 ) 2.6 0 (.10 2 ) 2.2 0 (.08 7 ) Part Marking Information TO-247AC E X AM PL E : T H IS I S A N IR F1 010 E XAM P LE : H T HA IS IS A N LY IR F.

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