IRFP064V Datasheet Power MOSFET

Manufacturer: Power MOSFET

Overview: PD - 94112 IRFP064V HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS.

Datasheet Details

Part number	IRFP064V
Manufacturer	Power MOSFET
File Size	210.13 KB
Description	Power MOSFET
Datasheet	IRFP064V_PowerMOSFET.pdf

General Description

l l D VDSS = 60V RDS(on) = 5.5mΩ G S ID = 130A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.

Key Features

T S 1 2 3 4 G A TE D R A IN S O UR C E D R A IN -D D B M 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 2X 5.50 (.217) 4.50 (.177) N OTE S : 1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O JE D E C O U T L IN E T O -24 7 -A C . 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118) C A S 0.80 (.031) 3X 0.40 (.016) 2.60 (.102) 2.20.

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