Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- T S 1 2 3 4 G A TE D R A IN S O UR C E D R A IN
-D D B M 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4
2X
5.50 (.217) 4.50 (.177)
N OTE S : 1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O JE D E C O U T L IN E T O -24 7 -A C . 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X
1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118) C A S
0.80 (.031) 3X 0.40 (.016) 2.60 (.102) 2.20.
IRFP064V Datasheet
