APPLICATIONS
DESCRIPTION
l l D VDSS = 60V RDS(on) = 5.5mΩ G S ID = 130A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 130 95 520 250 1.7 ± 20 130 25 4.7 -55 to + 175 300 (1.6mm from case ) 10 lbf●in (1.1N●m) Units A W W/°C V A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.24 ––– Max.
Power MOSFET
