CM600E2Y-34H Datasheet | Powerex, Inc

MITSUBISHI HVIGBT MODULES HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600E2Y-34H q IC 600A q VCES 1700V q Insulated Type q 1-elements in a pack (for brake) APPLICATION DC choppers, Dynamic braking choppers. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 57±0.25 57±0.25 4 - M8 NUTS E1 E1 C2 G1 E1 C2 124±0.25 140 30 C1 C1 E2 C1 E2 E1 G1 C1 C2 G2 E2 CIRCUIT DIAGRAM 16 3 - M4 NUTS 40 53 55.2 11.85 - φ 7 MOUNTING HOLES 5 35 11.5 14 38 31.5 LABEL HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb. 2000 MITSUBISHI HVIGBT MODULES HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25 °C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso - - Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C, IGBT part Conditions Ratings 1700 ±20 600 1200 600 1200 6200 - 40 ~ +150 - 40 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W °C °C V N- m N- m N- m kg (Note 1) (Note...