QIS0660001 - Single IGBT H-Series Hermetic Module (600 Amperes/600 Volts)

Description

Powerex IGBT Hermetic modules are designed for use in switching applications.

Each Module consists of two IGBT transistors in a half bridge configuration with each transistor having a reverse connected super fast recovery free wheel diode.

Features

Low Drive Power.
Low VCE(sat).
Discrete Super-Fast Recovery (70ns) Free-Wheel Diode.
High Frequency Operation (2025kHz).
Isolated Base plate for Easy Heat sinking.
Fully Hermetic Package.
Package Design Capable of Use at High Altitudes.
Package can be modified to adhere to customer dimensions. Schematic:.

Powerex Power Semiconductors

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Datasheet Details

Part number	QIS0660001
Manufacturer	Powerex Power Semiconductors
File Size	167.59 KB
Description	Single IGBT H-Series Hermetic Module (600 Amperes/600 Volts)
Datasheet	QIS0660001 Datasheet
Additional preview pages of the QIS0660001 datasheet.

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Full PDF Text Transcription

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QIS0660001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272 Single IGBT H-Series Hermetic Module 600 Amperes/600 Volts Description: Powerex IGBT Hermetic modules are designed for use in switching applications. Each Module consists of two IGBT transistors in a half bridge configuration with each transistor having a reverse connected super fast recovery free wheel diode. All components are located in a hermetically sealed chamber and are electrically isolated from the heat sinking base plate, offering simplified system assembly and thermal management.

Published: Apr 16, 2005 |