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QIS0660001 Datasheet

Manufacturer: Powerex, Inc
QIS0660001 datasheet preview

Datasheet Details

Part number QIS0660001
Datasheet QIS0660001_PowerexPowerSemiconductors.pdf
File Size 167.59 KB
Manufacturer Powerex, Inc
Description Single IGBT H-Series Hermetic Module (600 Amperes/600 Volts)
QIS0660001 page 2 QIS0660001 page 3

QIS0660001 Overview

Powerex IGBT Hermetic modules are designed for use in switching applications. Each Module consists of two IGBT transistors in a half bridge configuration with each transistor having a reverse connected super fast recovery free wheel diode. All ponents are located in a hermetically sealed chamber and are electrically isolated from the heat sinking base plate, offering simplified system assembly and thermal management.

QIS0660001 Key Features

  • Low Drive Power
  • Low VCE(sat)
  • Discrete Super-Fast Recovery (70ns) Free-Wheel Diode
  • High Frequency Operation (2025kHz)
  • Isolated Base plate for Easy Heat sinking
  • Fully Hermetic Package
  • Package Design Capable of Use at High Altitudes
  • Package can be modified to adhere to customer dimensions. Schematic
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