Powerex Corporation CT60AM-18F
INSULATED GATE BIPOLAR TRANSISTOR
| Part No. | CT60AM-18F |
|---|---|
| Datasheet | CT60AM-18F Download |
| Manufacturer | Powerex Corporation |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VCES VGES VGEM IC ICM IE PC Tj T stg (Tc = 25°C) Parameter Collector-Emitter Voltage Gate-Emitter Voltage Peak Gate-Emitter Voltage Collector Current Collector Current (Pulse) Emitter Current Maximum Power Dissipation Junction Temperature Storage Temperature VGE = 0V Conditions Ratings 900 ±25 ±30 60 120 40 180 –40 ~ +150 –40 ~ +150 20.6MIN. 2.5 26 Unit V V V A A A W °C °C Sep. 2000 MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTORELECTRICAL CHARACTERISTICS
Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres td(on) tr td(off) tf Etail Itail VEC trr Rth(j-c) Rth(j-c) Parameter Collector cutoff current Gate leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on deray time Turn-on rise time Turn-off delay time Turn-off fall time Tail loss Tail current Emitter-collector voltage Diode reverse recovery time Thermal resistance (IGBT) Thermal resistance (...