PSHM01
Overview
- HiPerFETTM technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode
- ECO-PAC 2 package - isolated back surface - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - solderable pins for PCB mounting
- UL registered, E 148688 Applications Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2.0 4 ±100 250 1 25 25 30 4500 1600 800 20 60 80 60 180 36 85 0.25 30 110 110 90 260 70 160 0.5 V V nA µA mA mΩ S
