Powersem GmbH PSHM01
Power MOSFET
MAXIMUM RATINGS
100 100 ±20 ±30 75 300 75 30 5 300 V V V V A A A mJ V/ns WFEATURES
● HiPerFETTM technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode● ECO-PAC 2 package - isolated back surface - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - solderable pins for PCB mounting
● UL registered, E 148688
APPLICATIONS
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2.0 4 ±100 250 1 25 25 30 4500 1600 800 20 60 80 60 180 36 85 0.25 30 110 110 90 260 70 160 0.5 V V nA µA mA mΩ S VDSS VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8● VDSS; TJ = 25°C VGS = 0 V; TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t < 300 µs, duty cycle d < 2% VDS = 10 V; ID = ID25,...