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PSHM40 - CoolMOS Power MOSFET

Features

  • ECO-PAC 2 with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High temperature cycling capability of chip on DCB - solderable pins for DCB mounting fast CoolMOS power MOSFET - 2nd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density UL registered, E.

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Datasheet Details

Part number PSHM40
Manufacturer Powersem GmbH
File Size 105.72 KB
Description CoolMOS Power MOSFET
Datasheet download datasheet PSHM40 Datasheet

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Full PDF Text Transcription

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ECO-PACTM 2 CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base PSHM 40/06 ID25 VDSS RDSon = 38 A = 600 V = 70 mΩ 1) L4 L6 L9 P18 R18 A1 E10 F10 K12 NTC K13 Preliminary Data Sheet MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VDS < VDSS; IF ≤ 50A;diF/dt≤ 200A/µs TVJ = 150°C ID = 10 A; L = 36 mH; TC = 25°C ID = 20 A; L = 5 µH; TC = 25°C Maximum Ratings 600 V ±20 V 38 A 25 A 6 V/ns 1.
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