PSHM40 Overview
IF ≤ 50A;diF/dt≤ 200A/µs TVJ = 150°C ID = 10 A; TC = 25°C Maximum Ratings 600 V ±20 V 38 A 25 A 6 V/ns 1.8 1 J.
PSHM40 Key Features
- Electrical isolation towards the heatsink
- Low coupling capacitance to the heatsink for reduced EMI
- High power dissipation
- High temperature cycling capability of chip on DCB
- solderable pins for DCB mounting fast CoolMOS power MOSFET
- 2nd generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive switching (UIS)
- Low thermal resistance due to reduced chip thickness Enhanced total power density UL registered, E 148688