Datasheet4U Logo Datasheet4U.com

PSHM40 Datasheet Coolmos Power MOSFET

Manufacturer: Powersem GmbH

Overview: ECO-PACTM 2 CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base PSHM 40/06 ID25 VDSS RDSon = 38 A = 600 V = 70 mΩ 1) L4 L6 L9 P18 R18 A1 E10 F10 K12 NTC K13 Preliminary Data Sheet MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VDS < VDSS; IF ≤ 50A;diF/dt≤ 200A/µs TVJ = 150°C ID = 10 A; L = 36 mH; TC = 25°C ID = 20 A; L = 5 µH; TC = 25°C Maximum Ratings 600 V ±20 V 38 A 25 A 6 V/ns 1.

Datasheet Details

Part number PSHM40
Manufacturer Powersem GmbH
File Size 105.72 KB
Description CoolMOS Power MOSFET
Datasheet PSHM40-PowersemGmbH.pdf

Key Features

  • ECO-PAC 2 with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High temperature cycling capability of chip on DCB - solderable pins for DCB mounting fast CoolMOS power MOSFET - 2nd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density UL registered, E.

More Datasheets from Powersem GmbH

Part Number Description
PSHM01 Power MOSFET
PSHM06 CoolMOS Power MOSFET
PSHM120 Power MOSFET
PSHI06 IGBT Module H-Bridge Configuration
PSHI06 IGBT Module H-Bridge Configuration
PSHI06 IGBT Module H-Bridge Configuration
PSHI06 IGBT Module H-Bridge Configuration
PSHI100 IGBT Module H-Bridge Configuration
PSHI25 IGBT Module H-Bridge Configuration
PSHI50 IGBT Module H-Bridge Configuration

PSHM40 Distributor