PSTG50HST12 Datasheet | Powersem GmbH

Features - Package with DCB ceramic base plate and soldering pins for PCB mounting - Isolation voltage over 3000 V∼ - Trench Gate - Enhancement Mode N-Channel Device - Non Punch through Structure - High Switching Speed - Low On-state Saturation Voltage - High Input Impedance Simplifies Gate Drive - Latch-Free Operation - Fully Short Circuit Rated to 10 µs - Wide RBSOA Applications - High Frequency Inverters - Motor Control - Switch Mode Power Supplies - High Frequency Welding - UPS Systems - PWM Drives IGBT-per devices Diode-per devices IISOL ≤ 1 m A, 50/60 Hz, t= 1 min. 180° sine Mounting torque (M4) typ. Creepage distance on surface Strike distance through air typ. 16 0.83 2.0 3000 1.5-1.8 min. 11.2 4.0 .. Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. POWERSEM Gmb H, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2005 POWERSEM reserves the right to change limits, test conditions and dimensions PSTG 50HST12 Symbol ICES IGES VCE(sat) VGE(th) td(on) tr td(off) tf Eon Eoff Cies Coes Cies VFM trr IRRM NTC Test Conditions VCE = VCES, VGE = 0 V, TVJ = 25°C TVJ = 125°C Characteristic Value typ. max. 0.4 2 1 2.3 m A m A µA V V V ns ns ns ns m J m J p F p F p F 1.9 1.92 90 12 470 V V ns A kΩ VCE = 0 V, VGE = ±20 V IC = 50A, VGE = 15 V TVJ = 25°C TVJ = 125°C IC = 50A, VGE = VCE Inductive load, TVJ = 125°C VCE = 50% VCEs, IC = 25 A RG = 5 Ω, VGE = ±15 V 1.9 2.1 7 170 17 340 60 4 7 8000 340 50 VCE = 75 V, VGE = 15 V, f= 1 MHz VCE = 75 V, VGE = 15 V, f= 1 MHz VCE = 75 V, VGE = 15 V, f= 1 MHz IF = 25 A, TVJ = 25°C TVJ = 125°C IF = 25 A, di RR / dt = 200 A/µs, VR = 50% VRRM 25°C Package style and outline Dimensions in mm (1mm = 0.0394“) .. POWERSEM Gmb H, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.:...