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PDNM6ET20V05 - Dual N-Channel Digital FET

General Description

The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number PDNM6ET20V05
Manufacturer Prisemi
File Size 207.17 KB
Description Dual N-Channel Digital FET
Datasheet download datasheet PDNM6ET20V05 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) 20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.29@ VGS=4.5V 0.5 PDNM6ET20V05 Dual N-Channel, Digital FET S2 1 6 D2 S2 D2 6N2 G2 2 5 G1 G2 G1 D1 3 4 S1 D1 S1 Circuit Diagram Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Continuous Curren(TJ=150℃) Pulsed Maximum Power Dissipation Operating Junction and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pF/1500Ω) Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient Marking (Top View) Symbol VDS VGS ID PD TJ, TSTG ESD Symbol RθJA Maximum 20 ±10 0.5 1.5 0.3 -55 to 150 6.