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PDNM8P60V5 - Dual N-Channel MOSFET

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The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number PDNM8P60V5
Manufacturer Prisemi
File Size 242.50 KB
Description Dual N-Channel MOSFET
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Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) 60 MOSFET Product Summary RDS(on)(mΩ) ID(A) 32@ VGS=4.5V 5 D1 D1 D2 D2 8 76 5 PE60D05S YYWW 1 23 4 S1 G1 S2 G2 Top View(SOP-8) PDNM8P60V5 Dual N-Channel MOSFET SOP-8L D1 D2 G1 G2 S1 S2 Internal Structure Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous（TC=100℃） Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance,Junction-to-Ambient(Note 1) Symbol VDS VGS ID ID（100℃） IDM PD TJ, TSTG Symbol RθJA Maximum 60 ±20 5 3.5 24 2 -55 to 150 Maximum 62.5 Units V V A A A W ℃ Units ℃/W Rev.06.
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