PNM523T201E0 Overview
Description
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) 20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.2@ VGS=4.5V 0.25@ VGS=2.5V 1 0.31@ VGS=1.8V PNM523T201E0 N-Channel MOSFET D（3） G（1） S（2） Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curren(TJ=150℃) Total power dissipation Channel temperature Range of storage temperature Continuous Pulsed Parameter Channel to ambient Symbol VDS VGS ID IDP PD TCH TSTG Value 20 ±10 1 4 140 150 -55 to 150 Units V V A mW ℃ ℃ Symbol Rth(ch-a) Limits 800 Units ℃/W Rev.06.10 1 N-Channel MOSFET PNM523T201E0 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward transfer admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-On Fall Time Drain-Source Diode Forward Voltage Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ︱Yfs︱ CISS COSS CRSS td(on) td(off) tr tf VSD Conditions ID =1mA,VGS=0V VDS =20V,VGS=0V VDS =0V,VGS=±8V VDS =10V, ID =1mA VGS=4.5V, ID =650mA VGS=2.5V, ID =450mA VGS=1.8V, ID =250mA VDS=10V, ID =300mA VGS=0V, VDS =10V, f=1MHz VDD≒10V, VGS =4.0V, RG=10Ω,RL=67Ω ID =150mA VGS=0V,IS=100mA Min.
