PNM523T201E0 Datasheet
PNM523T201E0 Datasheet (VBsemi)
VBsemi
PNM523T201E0-VB PNM523T201E0-VB Datasheet N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.270 at VGS = 4.5 V 20 0.390 at VGS = 2.5 V ID (A) c 0.85 0.70 Qg (TYP..
* Trench power MOSFET
* 100 % Rg tested
APPLICATIONS
* Smart phones, tablet PC’s
- DC/DC converters - Boost converters
- Load switch, OVP switch
S2
Top View S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain.
PNM523T201E0 Datasheet (Prisemi)
Prisemi
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) 20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.2@ VGS=4.5V 0.25@ VGS=2.5V 1 0.31@ VGS=.
itance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-On Fall Time Drain-Source Diode Forward Voltage Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ︱Yfs︱ CISS COSS CRSS td(on) td(off) tr tf VSD Conditions ID =1mA,VGS=0V VDS =20V,VGS=0V VDS =0V,VGS=±8V VDS =10V,.