PNM523T703E0-2 Overview
Description
PNM523T703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. VDS(V) 40 MOSFET Product Summary RDS(on)(Ω) VGS(th)(V) 3.5@ VGS=10V 0.5 to 1.3 ID(A) 0.18 D（3） SOT-523 (Top View) D（3） G（1） S（2） Circuit Diagram PN5 G（1） S（2） Marking (Top View) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol Conditions OFF CHARACTERISTICS VDSS ID =250μA,VGS=0V IDSS VDS =40V,VGS=0V IGSS VDS =0V,VGS=±20V VGS(th) VDS =VGS, ID =250μA RDS(ON) VGS=5V, ID =0.05A VGS=10V, ID =0.5A VSD IS DYNAMIC PARAMETERS CISS CDSS CRSS VGS=0V, VDS =25V, f=1MHz Min.
