The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
PNM523T703E0-2 N-Channel MOSFET
Description
PNM523T703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance.
VDS(V) 40
MOSFET Product Summary
RDS(on)(Ω)
VGS(th)(V)
3.5@ VGS=10V
0.5 to 1.3
ID(A) 0.