Datasheet Details
| Part number | PNM6N30V12 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 309.58 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 PNM6N30V12 Datasheet
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| Part number | PNM6N30V12 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 309.58 KB |
| Description | N-Channel MOSFET |
| Datasheet |
PNM6N30V12 Datasheet
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The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 30 MOSFET Product Summary RDS(on)(mΩ) ID(A) <15 @ VGS=10V 12 <20 @ VGS=4.5V Application Power switching application Hard switched and high frequency circuits Uninterruptible power supply PNM6N30V12 N-Channel MOSFET Pin 1 Drain DDG Source DDS DFN2*2-6L（Bottom View） （D） 1 （D） 2 （G） 3 6 （D） 5 （D） 4 （S） Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current- Continuous Drain Current- Continuous (TC=70℃) Pulse Drain Current Total Power Dissipation Operating and Storage Junction Temperature Range(1) Symbol VDS VGS ID ID IDM PD ( TA=25℃) PD ( TA=125℃) TJ,TSTG Internal structure Value 30 ±20 12 9 48 1.4 1.0 -55 to 150 Units V V A A A W W ℃ Thermal Characteristics Parameter Thermal Resistance, Junction to Ambient(2) Symbol RθJA Max.
75 Units ℃/W Rev.06.4 1 www.prisemi.com N-Channel MOSFET PNM6N30V12 Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage(3) Symbol BVDSS IDSS IGSS VGS(th) Drain-Source On-State Resistance(3) RDS(ON) Forward Transconductance(3) Input Capacitance(4) Output Capacitance(4) Reverse Transfer Capacitance(4) Turn-On Delay Time(4) Turn-On Rise Time(4) Turn-Off Delay Time(4) Turn-Off Fall Time(4) Total Gate Charge(4) Gate-Source Charge(4) Gate-Drain Charge(4) Diode Forward Voltage (3) Diode Forward Current(2) gFS CISS COSS CRSS td(on) tr td(off) tf Qg Qgs Qgd VSD IS Conditions ID =250μA,VGS=0V VDS =24V,VGS=0V VGS=±20V, VDS=0V VDS =VGS, ID =250μA VGS=10V, ID =8A VGS=4.5V, ID =6A VDS=5V, ID =8A VGS=0V, VDS =15V, f=1MHz VDD=15V, ID =8A, VGEN=4.5V, RG=1.5Ω, VDS=15V, ID =8A, VGS=4.5V VGS=0V,IS=1A Min.
Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 30 MOSFET Product Summary RDS(on)(mΩ) ID(A) <15 @ VGS=10V 12 <20 @ VGS=4.
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