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PNM723T201E0 - N-Channel MOSFET

Description

The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number PNM723T201E0
Manufacturer Prisemi
File Size 462.20 KB
Description N-Channel MOSFET
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Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) 20 ESD MOSFET Product Summary RDS(on)(Ω) ID(A) 0.2@ VGS=4.5V 0.25@ VGS=2.5V 1 0.31@ VGS=1.8V HBM MM Pass 500V Pass 100V PNM723T201E0 N-Channel MOSFET D（3） G（1） S（2） Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curren(TJ=150℃) Total power dissipation Channel temperature Range of storage temperature Continuous Pulsed Thermal resistance Parameter Channel to ambient Symbol VDS VGS ID IDP PD TCH TSTG Value 20 ±10 1 4 140 150 -55 to +150 Units V V A mW ℃ ℃ Symbol Rth(ch-a) Limits 800 Units ℃/W Rev.06.14 1 www.prisemi.
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