Datasheet Details
| Part number | PNM8P30V12 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 107.76 KB |
| Description | N-Channel MOSFET |
| Datasheet | PNM8P30V12-Prisemi.pdf |
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Overview: Description The N-channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
| Part number | PNM8P30V12 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 107.76 KB |
| Description | N-Channel MOSFET |
| Datasheet | PNM8P30V12-Prisemi.pdf |
|
|
|
The N-channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low on-resistance and fast switching speed.
PNM8P30V12 N-Channel MOSFET D（5、6、7、8） VDS(V) 30 MOSFET Product Summary RDS(on)(mΩ) ID(A) 12@ VGS=10V 17@ VGS=4.5V 12.0 G（4） S（1、2、3） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Drain-Source Diode Forward Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Symbol Conditions OFF CHARACTERISTICS BVDSS IDSS IGSS VGS(th) RDS(ON) VSD ID =250μA,VGS=0V VDS =24V,VGS=0V VDS =0V,VGS=±20V VDS =VGS, ID =10mA VGS=10V, ID =12A VGS=4.5V, ID =10A VGS=0V, IS =1A DYNAMIC PARAMETERS CISS CDSS CRSS VGS=0V, VDS =15V, f=1MHz SWITCHING PARAMETERS td(on) td(off) VDS=15V, VGS =10V, RL=1.3Ω, RG=3Ω Min.
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