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Description
Trench Power LV MOSFET technology High Power and current handing capability
MOSFET Product Summary
VDS(V) 20
RDS(on)(mΩ) 30@VGS = 4.5V 45@VGS = 2.5V
ID(A) 4.0
Applications
PWM application Load switch
PNMT2302 N-Channel MOSFET
Top View
Circuit Diagram
2302
Absolute maximum rating@25℃
Rating
Drain-source Voltage
Gate-source Voltage Drain Current Pulsed Drain Current1)
TA=25℃ @ Steady State TA=70℃ @ Steady State
Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient @ Steady State2)
Junction and Storage Temperature Range
Notes： 1) Pulse Test: Pulse Width≤300μs,Duty cycle ≤2%. 2) Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
Rev.06
1
Marking (Top View)
Symbol
VDS VGS ID IDM PD RθJA TJ,TSTG
Value
20
±10 4.0 3.5 18
1.
PNMT2302 Datasheet
