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Description
Trench Power LV MOSFET technology High density cell design for low RDS(ON) High Speed switching
MOSFET Product Summary
VDS(V) 30
RDS(on)(mΩ) 28@VGS = 10V 33@VGS = 4.5V 52@VGS = 2.5V
ID(A) 5.8
Applications
Battery protection Load switch Power management
PNMT3400 N-Channel MOSFET
Top View
Circuit Diagram
3400
Absolute maximum rating@25℃
Rating
Drain-source Voltage
Gate-source Voltage Drain Current Pulsed Drain Current1)
TA=25℃ @ Steady State TA=70℃ @ Steady State
Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient @ Steady State2)
Junction and Storage Temperature Range
Notes： 1) Pulse Test: Pulse Width≤300μs,Duty cycle ≤2%. 2) Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
Rev.
PNMT3400 Datasheet
