PNMT3400 Overview
Description
Trench Power LV MOSFET technology - High density cell design for low RDS(ON) - High Speed switching MOSFET Product Summary VDS(V) 30 RDS(on)(mΩ) 28@VGS = 10V 33@VGS = 4.5V 52@VGS = 2.5V ID(A) 5.8.
| Part | PNMT3400 |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Prisemi |
| Size | 1.15 MB |
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