PNMT50V02E Overview
Description
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) 50 MOSFET Product Summary RDS(on)(Ω) ID(A) 1@VGS=10V 0.22 PNMT50V02E N-Channel MOSFET D (3) G (1) Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current- Continuous Drain Current-Pulsed(Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Parameter S (2) Symbol VDS VGS ID IDM PD TJ, TSTG Symbol RθJA Maximum 50 ±20 0.22 0.88 0.35 -55 to 150 Maximum 350 Units V V A A W ℃ Units ℃/W Rev.06 1 N-Channel MOSFET PNMT50V02E Parameter Symbol Conditions Off Characteristics Drain-Source Breakdown Voltage BVDSS ID =250μA,VGS=0V Zero Gate Voltage Drain Current IDSS VDS =50V,VGS=0V Gate-Body Leakage Current IGSS VDS =0V,VGS=±12V On Characteristics(Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance Drain-Source Diode Forward Voltage Forward Transonductance VGS(th) RDS(ON) VSD gfs VDS =VGS, ID =250μA VGS=5V, ID =0.2A VGS=10V, ID =0.22A VGS=0V,IS=0.22A VDS=10V,ID=0.2A Dynamic Characteristics(Note 4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Switching Characteristics(Note 4) Ciss Coss Crss Qg VDS=25V, VGS=0V, f=1.0MHz VGS=10V, VDS=25V, ID =0.2A Turn-On Delay Time td(on) Turn-Off Delay Time Turn-On Rise Time td(off) tr VDD =30V, VGS =10V, RG=6Ω, ID =0.22A Turn-On Fall Time tf Diode Forward Current(Note 2) IS Diode Forward Voltage(Note 3) VSD VGS=0V, IS =0.22A Notes: 1.
