PNMT60V02 - N-Channel MOSFET

Prisemi

General Description

PNMT60V02 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance.

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Datasheet Details

Part number	PNMT60V02
Manufacturer	Prisemi
File Size	140.98 KB
Description	N-Channel MOSFET
Datasheet	PNMT60V02 Datasheet

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PNMT60V02 N-Channel MOSFET Description PNMT60V02 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） VDS(V) 60 MOSFET Product Summary RDS(on)(Ω) VGS(th)(V) 7.5@ VGS=10V 0.5 to 1.5 ID(A) 0.18 G（1） S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Symbol Conditions OFF CHARACTERISTICS VDSS IDSS IGSS VGS(th) RDS(ON) ID =10μA,VGS=0V VDS =40V,VGS=0V VDS =0V,VGS=±20V VDS =VGS, ID =250μA VGS=5V, ID =0.05A VGS=10V, ID =0.