PNMT60V02
PNMT60V02 is N-Channel MOSFET manufactured by Prisemi.
PNMT60V02 N-Channel MOSFET
Description
PNMT60V02 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance.
D（3）
VDS(V) 60
MOSFET Product Summary
RDS(on)(Ω)
VGS(th)(V)
7.5@ VGS=10V
0.5 to 1.5
ID(A) 0.18
G（1）
S（2）
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Gate-Body Leakage Current Gate Threshold Voltage
Static Drain-Source On-Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Delay Time Turn-Off Delay Time
Symbol
Conditions
OFF CHARACTERISTICS
VDSS IDSS IGSS VGS(th)
RDS(ON)
ID =10μA,VGS=0V VDS =40V,VGS=0V VDS =0V,VGS=±20V VDS =VGS, ID =250μA VGS=5V, ID =0.05A VGS=10V, ID =0.5A
DYNAMIC PARAMETERS
CISS CDSS CRSS
VGS=0V, VDS =25V, f=1MHz
SWITCHING PARAMETERS td(on)...
