PNMTO600V4 Description
The enhancement mode MOS is extremely high density cell and low on-resistance. Drain Current and Gate Voltage 0 -100 -50 0 50 100 150 Temperature (ºC) 200 Fig 4. Junction Temperature Rev.06 2 .prisemi.
PNMTO600V4 Datasheet
| Part number | PNMTO600V4 |
|---|---|
| Download | PNMTO600V4 Datasheet (PDF) |
| File Size | 119.32 KB |
| Manufacturer | Prisemi |
| Description | N-Channel MOSFET |
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