PNMTO600V4
PNMTO600V4 is N-Channel MOSFET manufactured by Prisemi.
PNMTO600V4 PNMTOF600V4 N-Channel MOSFET
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
D（2）
VDS(V) 600
MOSFET Product Summary
RDS(on)(Ω)
ID(A)
1.9@ VGS=10V
G（1）
S（3）
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Symbol
Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Gate-Body Leakage Current Gate Threshold Voltage
Static Drain-Source On-Resistance Forward Tran conductance Diode Forward Voltage
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulse Current
BVDSS IDSS IGSS VGS(th)
RDS(ON) g FS VSD
ID =250μA,VGS=0V VDS =600V,VGS=0V VDS =0V,VGS=±30V VDS =VGS, ID =250μA VGS=10V, ID =0.65A VDS =40V, ID =2A
IS=1A,VGS=0V
DYNAMIC PARAMETERS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
VGS=0V, VDS =25V, f=1MHz
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