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PNMTOF600V4 - N-Channel MOSFET

Download the PNMTOF600V4 datasheet PDF. This datasheet also covers the PNMTO600V4 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

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Note: The manufacturer provides a single datasheet file (PNMTO600V4-Prisemi.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PNMTOF600V4
Manufacturer Prisemi
File Size 119.32 KB
Description N-Channel MOSFET
Datasheet download datasheet PNMTOF600V4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PNMTO600V4 PNMTOF600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D（2） VDS(V) 600 MOSFET Product Summary RDS(on)(Ω) ID(A) 1.9@ VGS=10V 4 G（1） S（3） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Tran conductance Diode Forward Voltage Maximum Body-Diode Continuous Current Maximum Body-Diode Pulse Current BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM ID =250μA,VGS=0V VDS =600V,VGS=0V VDS =0V,VGS=±30V VDS =VGS, ID =250μA VGS=10V, ID =0.