PNMUT20V06 Description
The enhancement mode MOS is extremely high density cell and low on-resistance. Drain Current 10 CRss 0 0 4 8 12 16 VDS Drain Source Voltage (V) Fig 4. Capacitance 20 2 .prisemi.
PNMUT20V06 is N-Channel MOSFET manufactured by Prisemi.
| Part Number | Description |
|---|---|
| PNM3FD20V1E | N-Channel MOSFET |
| PNM3FD20V1ELN | N-Channel MOSFET |
| PNM3FD20V1EMN | N-Channel MOSFET |
| PNM3FD20V1EN | N-Channel MOSFET |
| PNM3FD20V2 | N-Channel MOSFET |
The enhancement mode MOS is extremely high density cell and low on-resistance. Drain Current 10 CRss 0 0 4 8 12 16 VDS Drain Source Voltage (V) Fig 4. Capacitance 20 2 .prisemi.