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PPM523T201E0 - P-Channel MOSFET

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The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number PPM523T201E0
Manufacturer Prisemi
File Size 232.64 KB
Description P-Channel MOSFET
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Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) -20 MOSFET Product Summary RDS(on)(Ω) ID(mA) 0.45@ VGS=-4.5V 0.62@ VGS=-2.5V -800 0.86@ VGS=-1.8V G(1) PPM523T201E0 P-Channel MOSFET D(3) S(2) 21E Marking Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curren(TJ=150℃) Source current(Body diode) Total power dissipation Channel temperature Range of storage temperature Continuous Pulsed Continuous Pulsed Thermal resistance Parameter Channel to ambient Symbol VDS VGS ID IDP IS ISP PD TCH TSTG Value -20 ±10 -800 -1200 -500 -1200 150 150 -55 to +150 Units V V mA mA mW ℃ ℃ Symbol Rth(ch-a) Limits 833 Units ℃/W Rev.06.7 1 www.prisemi.
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