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PPM723T201E0 - P-Channel MOSFET

Description

The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number PPM723T201E0
Manufacturer Prisemi
File Size 255.93 KB
Description P-Channel MOSFET
Datasheet download datasheet PPM723T201E0 Datasheet

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Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) -20 MOSFET Product Summary RDS(on)(Ω) ID(mA) 0.45@ VGS=-4.5V 0.62@ VGS=-2.5V -800 0.86@ VGS=-1.8V PPM723T201E0 P-Channel MOSFET D（3） G（1） S（2） Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curren(TJ=150℃) Source current(Body diode) Total power dissipation Channel temperature Range of storage temperature Continuous Pulsed Continuous Pulsed Thermal resistance Parameter Channel to ambient Symbol VDS VGS ID IDP IS ISP PD TCH TSTG Value -20 ±10 -800 -1200 -500 -1200 150 150 -55 to +150 Units V V mA mA mW ℃ ℃ Symbol Rth(ch-a) Limits 833 Units ℃/W Rev.06.9 1 www.prisemi.
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