Datasheet Details
| Part number | PPM8P40V8 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 265.08 KB |
| Description | P-Channel MOSFET |
| Download | PPM8P40V8 Download (PDF) |
|
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Overview: Description The PPM8P40V8 uses advanced trench technology to provide excellent RDS(on), low gate charge and operation with gate voltage as low as -4.5V.
| Part number | PPM8P40V8 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 265.08 KB |
| Description | P-Channel MOSFET |
| Download | PPM8P40V8 Download (PDF) |
|
|
|
The PPM8P40V8 uses advanced trench technology to provide excellent RDS(on), low gate charge and operation with gate voltage as low as -4.5V.
This device is suitable for use as a wide variety of application.
PPM8P40V8 P-Channel MOSFET D（5、6、7、8） VDS(V) -40 MOSFET Product Summary RDS(on)(mΩ) ID(A) 21@ VGS=-10V -8 31@ VGS=-4.5V G（4） Absolute Maxinmum Ratings @25℃ Parameter Drain-Source Voltage (VGS=0V) Gate-Source Voltage (VDS=0V) Drain Current-Continuous (TC=25℃) Drain Current-Continuous (TC=100℃) Drain Current-Continuous @Current-Pulse (Note1) Maximum Power Dissipation (TC=25℃) Maximum Power Dissipation (TC=100℃) Operating Junction and storage Temperature Range Symbol VDS VGS ID IDM(pulse) PD TJ,TSTG S（1、2、3） Value -40 ±20 -8 -5 -32 3 1.2 -55 To 150 Unit V V A A A W W ℃ Thermal Characteristic Parameter Thermal Resistance, Junction-to-Ambient Symbol RθJA Min.
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