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PPM8PN02R8 - P-Channel MOSFET

Description

The PPM8PN02R8 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

High Power and curr

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Datasheet Details

Part number PPM8PN02R8
Manufacturer Prisemi
File Size 477.96 KB
Description P-Channel MOSFET
Datasheet download datasheet PPM8PN02R8 Datasheet

Full PDF Text Transcription

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Description The PPM8PN02R8 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS(V) -20 MOSFET Product Summary RDS(on)(mΩ)(Typ) 5.6@ VGS = -4.5V 8@ VGS = -2.
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