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PPM8PN03R10 - P-Channel MOSFET

Description

The PPM8PN03R10 uses advanced trench technology to provide excellent RDS(ON), low gate charge.

This device is suitable for use as a load switch or in PWM applications.

High Power and curr

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Datasheet Details

Part number PPM8PN03R10
Manufacturer Prisemi
File Size 468.85 KB
Description P-Channel MOSFET
Datasheet download datasheet PPM8PN03R10 Datasheet

Full PDF Text Transcription

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Description The PPM8PN03R10 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS(V) -30 MOSFET Product Summary RDS(on)(mΩ)(Typ) 7.5@ VGS = -10V 10.8@ VGS = -4.
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