PPM8PN30V25 Datasheet | Prisemi

Description The PPM8PN30V25 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS(V) -30 MOSFET Product Summary RDS(on)(mΩ)(Typ) 11@ VGS = -10V 15@ VGS = -4.5V ID(A) -37 Feature - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Applications - PWM applications - Load switch - Power management - DC-DC Converters - Wireless Chargers Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Pulsed Drain Current1) Total Power Dissipation Avalanche Current2) Avalanche Energy2) Thermal Resistance , Junction-case3) Thermal Resistance Junction-to-Ambient3) Junction and Storage Temperature Range Rev.06.5 PPM8PN30V25 P-Channel MOSFET Pin1 S S G S D D DD PDFN3333-8L (Bottom View) Circuit Diagram 3013M YYWW Pin1 Marking (Top View) Symbol VDS VGS ID IDM PD IAS EAS RθJC RθJA TJ,TSTG Value -30 ±20 -37 -140 35.6 -36.5 66.74 7.87 44.8 -55~+150 Units V V A A W A m J ℃/W ℃/W ℃ .prisemi. P-Channel MOSFET Electrical characteristics per line@25℃ (unless otherwise...