Datasheet Details
| Part number | PPMET20V08 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 143.34 KB |
| Description | P-Channel MOSFET |
| Datasheet | PPMET20V08-Prisemi.pdf |
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Overview: PPMET20V08 P-Channel MOSFET.
| Part number | PPMET20V08 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 143.34 KB |
| Description | P-Channel MOSFET |
| Datasheet | PPMET20V08-Prisemi.pdf |
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The enhancement mode MOS is extremely high density cell and low on-resistance.
D（3） VDS(V) -20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.85@ VGS=-4.5V -0.8 1.2@ VGS=-2.5V -0.5 G（1） S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Tran conductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Symbol Conditions OFF CHARACTERISTICS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS ID =-250μA,VGS=0V VDS =20V,VGS=0V VDS =0V,VGS=±10V VDS =VGS, ID =-250μA VGS=-4.5V, ID =-0.8A VGS=-2.5V, ID =-0.5A VGS=5V, ID =50mA, TA=125℃ DYNAMIC PARAMETERS CISS CDSS CRSS VGS=0V, VDS =-6V, f=200KMHz SWITCHING PARAMETERS td(on) td(off) VDD=-6V, VGS =-4.5V, RL=6Ω, RG=6Ω, ID =-1A Min.
Typ.
| Part Number | Description |
|---|---|
| PPM3FD20V1E | P-Channel MOSFET |
| PPM3FD20V1EN | P-Channel MOSFET |
| PPM3FD20V2 | P-Channel MOSFET |
| PPM3FD20V2N | N-Channel MOSFET |
| PPM3GN20V3 | N-Channel MOSFET |
| PPM3T18V6 | P-Channel MOSFET |
| PPM523T201E0 | P-Channel MOSFET |
| PPM6N12V10 | P-Channel MOSFET |
| PPM6N15V12 | P-Channel MOSFET |
| PPM6N20V10 | P-Channel MOSFET |