PPMET20V08
PPMET20V08 is P-Channel MOSFET manufactured by Prisemi.
PPMET20V08 P-Channel MOSFET
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
D（3）
VDS(V) -20
MOSFET Product Summary
RDS(on)(Ω)
ID(A)
0.85@ VGS=-4.5V
-0.8
1.2@ VGS=-2.5V
-0.5
G（1）
S（2）
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Gate-Body Leakage Current Gate Threshold Voltage
Static Drain-Source On-Resistance Forward Tran conductance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Delay Time Turn-Off Delay Time
Symbol
Conditions
OFF CHARACTERISTICS
BVDSS IDSS IGSS VGS(th)
RDS(ON) g FS
ID =-250μA,VGS=0V VDS =20V,VGS=0V VDS =0V,VGS=±10V VDS =VGS, ID =-250μA VGS=-4.5V, ID =-0.8A VGS=-2.5V, ID =-0.5A VGS=5V, ID =50m A, TA=125℃
DYNAMIC PARAMETERS
CISS CDSS CRSS
VGS=0V, VDS =-6V,...
