PPMET20V08 Overview
The enhancement mode MOS is extremely high density cell and low on-resistance. Output Characteristics 3.5 4.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 VGS Gate to Source Voltage (V) Fig 2. Capacitance 20 Rev.06.2 2 .prisemi.
| Part number | PPMET20V08 |
|---|---|
| Datasheet | PPMET20V08-Prisemi.pdf |
| File Size | 143.34 KB |
| Manufacturer | Prisemi |
| Description | P-Channel MOSFET |
|
|
|
The enhancement mode MOS is extremely high density cell and low on-resistance. Output Characteristics 3.5 4.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 VGS Gate to Source Voltage (V) Fig 2. Capacitance 20 Rev.06.2 2 .prisemi.