PPMS8N20V3
PPMS8N20V3 is P-Channel MOSFET manufactured by Prisemi.
Description
PPMS8N20V3 P-Channel 1.8-V (G-S) MOSFET with Schottky Diode
VDS(V) -20
MOSFET Product Summary
RDS(on)(Ω)
ID(A)
0.110 @ VGS=-4.5V
-2.8
0.160 @ VGS=-2.5V
-2.0
0.240 @ VGS=-1.8V
-1.8
S（3） K（7、8） G（4）
VKA(V) 20
Schottky Product Summary
VF(V)
IF(A)
0.48V @ 0.5A
D（5、6） A（1、2）
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Drain-Source Voltage (MOSFET and Schottky)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (TJ=150°C) (MOSFET)
TA=25°C TA=85°C
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current...
