Datasheet Details
| Part number | PPMS8N20V3 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 99.40 KB |
| Description | P-Channel MOSFET |
| Datasheet | PPMS8N20V3-Prisemi.pdf |
|
|
Overview: Description PPMS8N20V3 P-Channel 1.8-V (G-S) MOSFET with Schottky Diode VDS(V) -20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.110 @ VGS=-4.5V -2.8 0.160 @ VGS=-2.5V -2.0 0.240 @ VGS=-1.8V -1.
| Part number | PPMS8N20V3 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 99.40 KB |
| Description | P-Channel MOSFET |
| Datasheet | PPMS8N20V3-Prisemi.pdf |
|
|
|
PPMS8N20V3 P-Channel 1.8-V (G-S) MOSFET with Schottky Diode VDS(V) -20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.110 @ VGS=-4.5V -2.8 0.160 @ VGS=-2.5V -2.0 0.240 @ VGS=-1.8V -1.8 S（3） K（7、8） G（4） VKA(V) 20 Schottky Product Summary VF(V) IF(A) 0.48V @ 0.5A 1.0 D（5、6） A（1、2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Voltage (MOSFET and Schottky) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ=150°C) (MOSFET) TA=25°C TA=85°C Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Maximum Power Dissipation (MOSFET) TA=25°C TA=85°C Maximum Power Dissipation (Schottky) TA=25°C TA=85°C Operating Junction and Storage Temperature Range Soldering Recommendation (Peak Temperature) Symbol VDS VKA VGS ID IDM IS IF IFM PD TJ,Tstg TPS Value -20 20 ± 10 -2.8 -1.9 -10 -0.9 1.0 7 1.1 0.6 0.96 0.59 -55 ~ 150 260 Units V A W °C °C Rev.06 1 www.prisemi.com MOSFET with Schottky Absolute maximum ratings@25℃ Parameter Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Pin) MOSFET Schottky MOSFET Schottky MOSFET Schottky PPMS8N20V3 Condition t ≤ 5sec Steady State Steady State Symbol RthJA RthJP Typical 50 77 90 110 30 33 Maximum 60 95 110 130 40 40 Unit °C/W MOSFET Specifications (TJ=25℃ Unless Otherwise Noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Symbol VGS(th) IGSS IDSS ID(on) Drain-Source On-State Resistance RDS(on) Forward Tran Conductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time gfs VSD Qg Qgs Qgd td(on) tr td(off) tf trr Condition VDS=VGS, ID=-250μA VDS=0V, VGS=±8V VDS=-16V, VGS=0V VDS=-16V, VGS=0
| Part Number | Description |
|---|---|
| PPM3FD20V1E | P-Channel MOSFET |
| PPM3FD20V1EN | P-Channel MOSFET |
| PPM3FD20V2 | P-Channel MOSFET |
| PPM3FD20V2N | N-Channel MOSFET |
| PPM3GN20V3 | N-Channel MOSFET |
| PPM3T18V6 | P-Channel MOSFET |
| PPM523T201E0 | P-Channel MOSFET |
| PPM6N12V10 | P-Channel MOSFET |
| PPM6N15V12 | P-Channel MOSFET |
| PPM6N20V10 | P-Channel MOSFET |