Datasheet Details
| Part number | PPMT20V4A |
|---|---|
| Manufacturer | Prisemi |
| File Size | 549.21 KB |
| Description | P-Channel MOSFET |
| Download | PPMT20V4A Download (PDF) |
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Overview: Description The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness.
| Part number | PPMT20V4A |
|---|---|
| Manufacturer | Prisemi |
| File Size | 549.21 KB |
| Description | P-Channel MOSFET |
| Download | PPMT20V4A Download (PDF) |
|
|
|
The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness.
Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output Leakage MOSFET Product Summary VDS(V) -20 RDS(on)(mΩ) 32@VGS = -4.5V 42@VGS = -2.5V ID(A) -4.0 Applications Battery operated systems Solid-state relays Direct logic-level interface：TTL/CMOS PPMT20V4A P-Channel MOSFET Top View D(3) G(1) S(2) Circuit Diagram D(3) PT24A G(1) S(2) Marking (Top View) Absolute maximum rating@25℃ Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current Rating Total Power Dissipation Junction and Storage Temperature Range TA=25℃ TA=125℃ Symbol VDS VGS ID IDM PD TJ,TSTG Value -20 ±12 -4.0 -35 0.83 0.17 -55~+150 Units V V A A W ℃ Rev.06.0 1 www.prisemi.com P-Channel MOSFET PPMT20V4A Electrical characteristics per line@25℃ (unless otherwise specified) Parameter OFF Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Symbol BVDSS IDSS IGSS VGS(th) Static Drain-Source On-Resistance RDS(ON) Dynamic Parameters Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Parameters Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Ciss Coss Crss tD(on) tr tD(off) tr Conditions VGS = 0V, ID = -250μA VDS = -20V,VGS = 0V VGS = ±12V, VDS = 0V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -5.0A VGS = -2.5V, ID = -3.0A VDS = -10V,VGS = 0V, f = 1MHz VGen = -4.5V,VDD = -10V, RG = 1Ω,ID = -3.3A Min.
Typ.
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