PPMT3415R Overview
The enhancement mode MOS is extremely high density cell and low on-resistance. 70 Units ℃/W Rev.06.0 1 .prisemi. P-Channel MOSFET per line@25℃( unless otherwise specified) PPMT3415R Parameter Symbol Conditions Min.
| Part number | PPMT3415R |
|---|---|
| Datasheet | PPMT3415R-Prisemi.pdf |
| File Size | 372.21 KB |
| Manufacturer | Prisemi |
| Description | P-Channel MOSFET |
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The enhancement mode MOS is extremely high density cell and low on-resistance. 70 Units ℃/W Rev.06.0 1 .prisemi. P-Channel MOSFET per line@25℃( unless otherwise specified) PPMT3415R Parameter Symbol Conditions Min.
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|---|---|
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