PPMT3415R Overview
Description
The enhancement mode MOS is extremely high density cell and low on-resistance. PPMT3415R P-Channel MOSFET D（3） VDS(V) -20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.03 @ VGS=-4.5V -6 G（1） Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current Continuous (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation(Note 1) Avalanche Current(Note 3) Avalanche Energy(Note 3) Junction and Storage Temperature Range Parameter Maximum Junction-to-Ambient (Note 1) Symbol VDS VGS ID IDM PD IAS EAS TJ,TSTG S（2） Value -20 ±10 -6 -30 1.8 10.3 26.7 -55 to +150 Units V V A A W A mJ ℃ Symbol RθJA Typ.
