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Feature
Ultra Small mold type. DFN1006-2L Low IR High reliability.
Applications
Low current rectification
Construction
Silicon epitaxial planar
PSBD2FD40V01 Schottky Barrier Diode
DFN1006-2L(Bottom View)
Pin 1
Pin 2
Circuit Diagram
Mechanical Characteristics
Mounting position: Any Qualified max reflow temperature:260℃ Device meets MSL 1 requirements DFN1006-2L without plating
Electrical characteristics per line@25℃
Parameter
Forward voltage Reverse current
Symbol
VF IR
Min.
-
Typ.
-
Marking (Top View)
Max.
0.37 10
Unit
V µA
Conditions
IF=10mA VR=10V
Rev.06.6
1
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PSBD2FD40V01 Datasheet
