PSM8N10R8 Overview
The PSM8N10R8 uses split gate trench technology to provide excellent RDS(ON) low gate charge. This device is suitable for power management and high efficiency applications at high switching frequencies applications. MOSFET Product Summary VDS(V) 100 RDS(on)(mΩ) 6.5@ VGS = 10V 8.3@ VGS = 4.5V ID(A).