PSM8N10R8
PSM8N10R8 is N-Channel MOSFET manufactured by Prisemi.
Description
The PSM8N10R8 uses split gate trench technology to provide excellent RDS(ON) low gate charge. This device is suitable for power management and high efficiency applications at high switching frequencies applications.
MOSFET Product Summary
VDS(V) 100
RDS(on)(mΩ) 6.5@ VGS = 10V 8.3@ VGS = 4.5V
ID(A) 70
Feature
- Low RDS(ON)
- Ensures On-State Losses are Minimized
- Excellent Qgd x RDS(ON) Product(FOM)
- Advanced Technology for DC-DC Converts
- Small Form Factor Thermally Efficient Package
Enables Higher Density End Products
- 100% UIS (Avalanche) Rated
- Lead-Free Finish ; RoHS pliant
- Halogen and Antimony Free. ”Green” Device
Applications
- PWM applications
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