The PSM8PN03R2 uses split gate trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for power management and high efficiency applications at high switching frequencies applications.
RDS(on)(mΩ)(Typ) 1.5@ VGS = 10V 2.
| Part number | PSM8PN03R2 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 938.65 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 PSM8PN03R2 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| PSM-001KPDW | Pressure sensor module | Fujikura |
| PSM-001KPGW | Pressure sensor module | Fujikura |
| PSM-002KPD | Pressure sensor module | Fujikura |
| PSM-002KPDW | Pressure sensor module | Fujikura |
| PSM-002KPG | Pressure sensor module | Fujikura |
| Part Number | Description |
|---|---|
| PSM8PN03R3 | N-Channel MOSFET |
| PSM8PN04R5 | N-Channel MOSFET |
| PSM8PN04R8 | N-Channel MOSFET |
| PSM8PN06R15 | N-Channel MOSFET |
| PSM8N03R2 | N-Channel MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
