Datasheet4U Logo Datasheet4U.com

PSM8PN04R8 - N-Channel MOSFET

General Description

The PSM8PN04R8 uses split gate trench technology to provide excellent RDS(ON) low gate charge.

This device is suitable for power management and high efficiency applications at high switching frequencies applications.

📥 Download Datasheet

Datasheet Details

Part number PSM8PN04R8
Manufacturer Prisemi
File Size 440.91 KB
Description N-Channel MOSFET
Datasheet download datasheet PSM8PN04R8 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PSM-001KPDW Pressure sensor module Fujikura
PSM-001KPGW Pressure sensor module Fujikura
PSM-002KPD Pressure sensor module Fujikura
PSM-002KPDW Pressure sensor module Fujikura
PSM-002KPG Pressure sensor module Fujikura

Other Datasheets by Prisemi

Part Number Description
PSM8PN04R5 N-Channel MOSFET
PSM8PN03R2 N-Channel MOSFET
PSM8PN03R3 N-Channel MOSFET
PSM8PN06R15 N-Channel MOSFET
PSM8N03R2 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Description The PSM8PN04R8 uses split gate trench technology to provide excellent RDS(ON) low gate charge. This device is suitable for power management and high efficiency applications at high switching frequencies applications. MOSFET Product Summary VDS(V) 40 RDS(on)(mΩ) 6.1@ VGS = 10V 8.2@ VGS = 4.5V ID(A) 55 Feature  Low RDS(ON) - Ensures On-State Losses are Minimized  Excellent Qgd x RDS(ON) Product(FOM)  Advanced Technology for DC-DC Converts  Small Form Factor Thermally Efficient Package Enables Higher Density End Products  100% UIS (Avalanche) Rated  Lead-Free Finish ; RoHS Compliant  Halogen and Antimony Free.