| Part number | PSM8PN06R15 |
|---|---|
| Datasheet | PSM8PN06R15-Prisemi.pdf |
| File Size | 456.00 KB |
| Manufacturer | Prisemi |
| Description | N-Channel MOSFET |
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The PSM8PN06R15 uses split gate trench technology to provide excellent RDS(ON) low gate charge. This device is suitable for use as a load switch or in PWM applications. MOSFET Product Summary VDS(V) 60 RDS(on)(mΩ) 12@ VGS = 10V 16@ VGS = 4.5V ID(A).
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