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PSM8PN06R15 - N-Channel MOSFET

General Description

provide excellent RDS(ON) low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Low RDS(ON) - Ensures On-Sta

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Datasheet Details

Part number PSM8PN06R15
Manufacturer Prisemi
File Size 456.00 KB
Description N-Channel MOSFET
Datasheet download datasheet PSM8PN06R15 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description The PSM8PN06R15 uses split gate trench technology to provide excellent RDS(ON) low gate charge. This device is suitable for use as a load switch or in PWM applications. MOSFET Product Summary VDS(V) 60 RDS(on)(mΩ) 12@ VGS = 10V 16@ VGS = 4.5V ID(A) 37 Feature  Low RDS(ON) - Ensures On-State Losses are Minimized  Excellent Qgd x RDS(ON) Product(FOM)  Advanced Technology for DC-DC Converts  Small Form Factor Thermally Efficient Package Enables Higher Density End Products  100% UIS (Avalanche) Rated  Lead-Free Finish ; RoHS Compliant  Halogen and Antimony Free.