PT236T30E2
PT236T30E2 is Transistor manufactured by Prisemi.
Feature
This device is Pb-Free, Halogen Free/BFR Free and RoHS pliant.
- Very low collector to emitter saturation voltage
- DC current gain >100
- 3A continuous collector current
- PNP epitaxial planar silicon transistor
PT236T30E2 Transistor
16 25 34
Mechanical Characteristics
- Lead finish:100% matte Sn(Tin)
- Mounting position: Any
- Qualified max reflow temperature:260℃
- Device meets MSL 1 requirements
- Pure tin plating: 7 ~ 17 um
- Pin flatness:≤3mil
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter -Base Breakdown Voltage Collector Current Collector Peak Current Base...
