Full PDF Text Transcription for PT236T30E2 (Reference)
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PT236T30E2. For precise diagrams, and layout, please refer to the original PDF.
Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage DC current gain >100 3A continuous collec...
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itter saturation voltage DC current gain >100 3A continuous collector current PNP epitaxial planar silicon transistor PT236T30E2 Transistor 16 25 34 Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260℃ Device meets MSL 1 requirements Pure tin plating: 7 ~ 17 um Pin flatness:≤3mil Electrical characteristics per line@25℃( unless otherwise specified) Parameter Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter -Base Breakdown Voltage Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipa
PT236T30E2 Datasheet
