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Feature
¾ This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant.
1 - Base
PT23T3904 Transistor
3 - Collector
2 - Emitter
Mechanical Characteristics
¾ Lead finish:100% matte Sn(Tin) ¾ Mounting position: Any ¾ Qualified max reflow temperature:260℃ ¾ Device meets MSL 1 requirements ¾ Pure tin plating: 7 ~ 17 um ¾ Pin flatness:≤3mil
Structure
NPN epitaxial planar silicon transistor
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter -Base Breakdown Voltage Collector Current DC Base Cutoff Current Collector Cutoff Current
Symbol
V (BR)CEO V (BR)CBO V (BR)EBO
IC IBL ICEX
Conditions
IC=1.0mA,IB=0 IC=10uA,IE=0 IE=10uA,IC=0
VCE=30V, VEB=3.0V VCE=30V, VEB=3.0V
Min.
40 60 6.