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P25D09L Datasheet PDF

Puya Semiconductor P25D09L

The P25D09L is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the device, with its page erase granularity it is ideal for data storage as well, eliminating the need for additional data storage devices. The erase block sizes of the device have been optimized to meet the needs of today's code and data storage applications.
Part No. P25D09L
Datasheet P25D09L Download
Manufacturer
Puya Semiconductor
Description 1M-bit Serial Standard and Dual I/O Flash Memory
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P25D09L datasheet page 1 preview

DESCRIPTION

By optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own erase regions, the wasted and unused memory space that occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device density. Specifically designed for use in many different systems, the device supports read, program, and erase operations with a wide supply voltage range of 1.65V to 2.0V. No separate voltage is required for programming and erasing. Puya Semiconductor Page 4 of 40 P25D09L Datasheet 3 Pin Definition 3.1 Pin Configurations CS# 1 8 SO 2 7 WP# 3 6 GND 4 5 VCC NC SLCK SI Vcc CS# 1 6 TOP View 2 5 CLK SI(IO0) SO(IO1) 3 4 GND 8-Lead SOP (150mil) and TSSOP 6-Pad USON(1.2x1.2mm) 3.2 Pin Descriptions No.
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