Overview: PY25Q01GLC_Datasheet
PY25Q01GLC
Ultra Low Power, 1G-bit Serial Multi I/O Flash Memory Datasheet
Performance Highlight
Supply Range from 1.65 to 2.0V for Read, Erase and Program Ultra Low Power consumption for Read, Erase and Program X1, X2 and X4 Multi I/O, QPI, DTR Support High reliability with 100K cycling and 20 Year-retention Puya Semiconductor Page 1 of 112 PY25Q01GLC_Datasheet 1 Overview General Single 1.65 to 2.0V supply Industrial Temperature Range -40C to 85C Serial Peripheral Interface (SPI) patible: Mode 0 and Mode 3 Single, Dual, Quad SPI, QPI, DTR - Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD# - Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD# - Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3 - QPI: SCLK, CS#, IO0, IO1, IO2, IO3 - DTR: Double Transfer Rate Read Flexible Architecture for Code and Data Storage - Uniform 256-byte Page Program - Uniform 4K-byte Sector Erase - Uniform 32K/64K-byte Block Erase - Full Chip Erase Hardware Controlled Locking of Protected Sectors by WP# Pin One Time Programmable (OTP) Security Register - 3*1024-Byte Security Registers with OTP Lock 128-bit Unique ID for each device Fast Program and Erase Speed Typical - 0.25ms Page program time - 20ms 4K-byte sector erase time - 0.10/0.
