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P4C1026 - ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM

General Description

The P4C1026 is a 1 Meg ultra high speed static RAM organized as 256K x 4.

The CMOS memory requires no clock or refreshing and has equal access and cycle times.

Inputs and outputs are fully TTL-compatible.

Key Features

  • Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times).
  • 15/20/25/35 ns (Commercial/Industrial).
  • 20/25/35 ns (Military) Low Power www. DataSheet4U. com Single TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved).
  • 28-Pin 300 mil SOJ.
  • 28-Pin 400 mil SOJ.
  • 28-Pin 400 mil Ceramic DIP.
  • 32-Pin Ceramic LCC 5V±10% Power Supply Data Retention with 2.0V Supply Three-State Outputs.

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Datasheet Details

Part number P4C1026
Manufacturer Pyramid Semiconductor
File Size 327.13 KB
Description ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM
Datasheet download datasheet P4C1026 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Low Power www.DataSheet4U.com Single TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) – 28-Pin 300 mil SOJ – 28-Pin 400 mil SOJ – 28-Pin 400 mil Ceramic DIP – 32-Pin Ceramic LCC 5V±10% Power Supply Data Retention with 2.0V Supply Three-State Outputs DESCRIPTION The P4C1026 is a 1 Meg ultra high speed static RAM organized as 256K x 4. The CMOS memory requires no clock or refreshing and has equal access and cycle times. Inputs and outputs are fully TTL-compatible. The RAM operates from a single 5V±10% tolerance power supply.