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QL63H5S-C Datasheet LASER DIODE

Manufacturer: QSI

Overview: QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL63H5S-A/B/C Tentative Signature of Approval Approvaed by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL63H5S-A/B/C InGaAlP Laser Diode Tentative Quantum Semiconductor International Co., Ltd. Ver. 3 2006 ♦OVERVIEW QL63H5S-A/B/C is a MOCVD grown 635nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 20mW for optoelectronic devices such as Optical Leveler and Modules.

Download the QL63H5S-C datasheet PDF. This datasheet also includes the QL63H5S-A variant, as both parts are published together in a single manufacturer document.

Key Features

  • - Visible Light Output : λp = 635 nm - Optical Power Output : 20mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode.