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QL63H5S-A Datasheet LASER DIODE

Manufacturer: QSI

Overview

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL63H5S-A/B/C Tentative Signature of Approval Approvaed by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL63H5S-A/B/C InGaAlP Laser Diode Tentative Quantum Semiconductor International Co., Ltd.

Ver.

3 2006 ♦OVERVIEW QL63H5S-A/B/C is a MOCVD grown 635nm band InGaAlP laser diode with quantum well structure.

Key Features

  • - Visible Light Output : λp = 635 nm - Optical Power Output : 20mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode.